l209 Datasheet, PDF (4/4 Pages) IXYS Corporation – High Voltage IGBT

IXDN 75N120
40
mJ
30
E_on
20
160
E_on
t_d(on)
ns
120
t
t_r
80
10
0
0
V_CE = 600V
V_GE = ±15V 40
R_G = 15W
T_J = 125°C
0
50
100
150 A
I_C
Fig. 5 Typ. turn on energy and switching
times versus collector current
25
mJ
V_CE = 600V
V_GE = ±15V
20
E_on
I_C = 75A
T_J = 125°C
15
10
t_d(on)
200
ns
E_{on 160}
t
120
t_{r 80}
5
40
0
08
Fig. 7
W⁰
16 24 32 40 48 56
R_G
Typ. turn on energy and switching
times versus gate resistor
200
A
I_CM ¹⁵⁰
100
50
R_G = 15W
T_J = 125°C
V_CEK < V_CES
0
0 200 400 600 800 1000 1200 V
V_CE
Fig. 9 Reverse biased safe operating area
RBSOA
20
mJ
E_off ¹⁵
E_off
t_d(off)
800
ns
600
t
10
400
V_CE = 600V
V_GE = ±15V
5
R_G = 15W ₂₀₀
T_J = 125°C
t_f
0
0
0
50
100
150 A
I_C
Fig. 6 Typ. turn off energy and switching
times versus collector current
25
mJ
20
E_off
15
V_CE = 600V
V_GE = ±15V
I_C = 75A
T_J = 125°C
10
t_d(off)
E_off
2000
ns
1600
t
1200
800
5
400
0
0
8
16
24
32
40
W^{tf 0}
48 56
R_G
Fig.8 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
Z_thJC
0.01
0.001
0.0001
single pulse
0.00001
0.00001 0.0001 0.001 0.01
IXDN75N120
0.1 s 1
t
Fig. 10 Typ. transient thermal impedance
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