VID160-12P1 Datasheet, PDF (4/4 Pages) IXYS Corporation – IGBT Modules in ECO-PAC 2

VID 160-12P1
VIO160-12P1 VDI 160-12P1
40
mJ
30
E_on
t_d(on)
E_on
120
ns
90
t_r
t
20
60
V_CE = 600V
V_GE = ±15V
10
R_G = 6.8Ω ₃₀
T_J = 125°C
0
0 ^156T120
0
50
100
150
200 A
I_C
Fig. 7 Typ. turn on energy and switching
times versus collector current
50
mJ
V_CE = 600V
V_GE = ±15V
40 I_C = 100A
E_on
T_J = 125°C
30
300
E_{on ns}
t_{d(on) 240}
t
t_{r 180}
20
120
10
60
0
0 ^156T120
0 8 16 24 32 40 48 Ω 56
R_G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
240
A
200
I_{CM 160}
120
80
R_G = 6.8Ω
T_J = 125°C
V_CEK < V_CES
40
0
156T120
0 200 400 600 800 1000 1200 V
V_CE
Fig. 11 Reverse biased safe operating area
RBSOA
40
mJ
E_off ³⁰
800
t_d(off)
E_off
ns
600
t
20
400
V_CE = 600V
V_GE = ±15V
10
R_G = 6.8Ω
T_J = 125°C
200
0
t _{156T120 f}
0
0
50
100
150
200 A
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current
B3
25
mJ
20
E_off
15
V_CE = 600V
V_GE = ±15V
I_C = 100A
T_J = 125°C
1500
t_{d(off) ns}
1200
E_off
t
900
10
600
5
300
0
156T120
t_f
0
0 8 16 24 32 40 48 Ω 56
R_G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0,1
Z_thJC
0,01
diode
IGBT
0,001
0,0001
single pulse
0,00001
0,00001 0,0001 0,001
0,01
VDI...160-12P1
0,1 s 1
t
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
4-4