IXTQ64N25 Datasheet, PDF (4/5 Pages) IXYS Corporation – PolarHT Power MOSFET

IXTQ 64N25P
IXTT 64N25P
Fig. 7. Input Adm ittance
120
105
90
75
60
45
T_J = 125ºC
30
25ºC
-40ºC
15
0
4 4.5
5 5.5
6 6.5
7 7.5
8
V_{G S} - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
180
150
120
90
60
T_J = 125ºC
30
T_J = 25ºC
0
0.4
0.6
0.8
1
1.2
1.4
V_{S D} - Volts
10000
Fig. 11. Capacitance
f = 1MHz
Ciss
Fig. 8. Transconductance
60
50 T_J = -40ºC
25ºC
40
125ºC
30
20
10
0
0 15 30 45 60 75 90 105 120 135
I _D - Amperes
Fig. 10. Gate Charge
10
9
V_DS = 125V
8
I_D = 32A
7
I_G = 10mA
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110
Q _G - nanoCoulombs
1000
Fig. 12. Forw ard-Bias
Safe Operating Area
R_DS(on) Limit
T_J = 150ºC
T_C = 25ºC
1000
Coss
Crss
100
25µs
1ms
100µs
10ms
10
DC
100
0
5 10 15 20 25 30 35 40
V_{D S} - Volts
1
10
100
V_{D S} - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343