IXTH2R4N120P Datasheet, PDF (4/4 Pages) IXYS Corporation – N-Channel Enhancement Mode

IXTA2R4N120P IXTP2R4N120P
IXTH2R4N120P
Fig. 7. Input Admittance
2.8
2.4
2.0
1.6
1.2
T_J = 125ºC
25ºC
- 40ºC
0.8
0.4
0.0
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
6.4
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
8
7
6
5
4
3
T_J = 125ºC
2
T_J = 25ºC
1
0
0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
V_SD - Volts
10000
1000
Fig. 11. Capacitance
f = 1 MHz
Ciss
100
Coss
10
Crss
1
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 8. Transconductance
4.0
3.6
T_J = - 40ºC
3.2
2.8
25ºC
2.4
2.0
1.6
125ºC
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
I_D - Amperes
Fig. 10. Gate Charge
10
9
V_DS = 600V
I _D = 1.2A
8
I _G = 10mA
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
Q_G - NanoCoulombs
10.00
Fig. 12. Maximum Transient Thermal
Im pedance
1.00
0.10
0.01
0.00001 0.0001 0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: T_2R4N120P(3C) 4-02-08-A