IXSX35N120AU1 Datasheet, PDF (4/5 Pages) IXYS Corporation – High Voltage IGBT with Diode

IXSX 35N120AU1
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
1250
25
T_J = 125°C

R_G = 10
1000
20
t_fi
750
15
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on R_G
1250
18
T_J = 125°C
I_C = 35A
1000
17
t_fi
750
16
500
10
E_off
250
0
5
10 20 30 40 50 60 70
I_C - Amperes
Fig.9 Gate Charge Characteristic Curve
15
I_C = 35A
V_CE = 500V
12
9
6
3
500
E_off
250
0
10
20
30
40
R_G - Ohms
Fig.10 Turn-Off Safe Operating Area
100
10
T_J = 125°C

R_G = 2.7
dV/dt < 5V/ns
1
15
14
50
0.1
0
0
50
100
150
200
Q_G - nanocoulombs
Fig.11 Transient Thermal Impedance
1
0.01
0
200 400 600 800 1000 1200
V_CE - Volts
D=0.5
0.1 ^D=0.2
D=0.1
D=0.05
D=0.02
0.01 _D=0.01
D = Duty Cycle
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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