IXSH30N60B Datasheet, PDF (4/4 Pages) IXYS Corporation – High Speed IGBT

Fig.7 Turn-Off Energy per Pulse and
1.5
Fall Time on Collector Current
7.5
T_J = 125°C
R_G = 10Ω
1.0
E_(ON)
E_(OFF)
5.0
0.5
2.5
0.0
0
20
40
60
I_C - Amperes
0.0
80
Fig.9 Gate Charge Characteristic Curve
15
I_C =30A
12
V_CE = 300V
9
6
3
0
0
25
50
75
100 125
Q_g - nanocoulombs
Fig.11 Transient Thermal Impedance
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Fig.8 Dependence of Turn-Off Energy
2.0
Per Pulse and Fall Time on R_G
8
T_J = 125°C
E_(OFF)
I_C = 60A
1.5
6
E_(ON)
1.0
0.5
0.0
0
E_(ON)
10
4
I_C = 30A
E_(ON)
E_(OFF)
2
I_C = 15A
20
30
E_(OFF)
0
40
50
R_G - Ohms
Fig.10 Turn-Off Safe Operating Area
100
10
T_J = 125°C
R_G = 4.7Ω
dV/dt < 5V/ns
1
0.1
0
100 200 300 400 500 600
V_CE - Volts
1
D=0.5
D=0.2
0.1 _D=0.1
D=0.05
D=0.02
D=0.01
0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025