IXKH35N60C5 Datasheet, PDF (4/4 Pages) IXYS Corporation – N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

IXKH 35N60C5
0.5
T_JV = 150°C
0.4
0.3
V_DS = 5 V
0.2
0.1
5.5 V
6V
6.5 V
7V
20 V
0.3
I_D = 18 A
V_GS = 10 V
0.25
0.2
0.15
98 %
typ
0.1
0.05
160
V_DS > 2·R_{DS(on) max} · I_D
120
80
40
25 °C
T_J =^{150 °C}
0
0
10
20
30
40
50
I _D [A]
Fig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
0
-60 -20
20
60
100 140 180
T _j [°C]
Fig. 5 Drain-source on-state resistance
0
0
2
4
6
V _GS [V]
8
10
Fig. 6 Typ. transfer characteristics
10 ²
25 °C, 98%
T_J =^{150 °C}
25 °C
10 ¹
150 °C, 98%
10 ⁰
10 ^-1
0
0.5
1
1.5
2
V _SD [V]
Fig. 7 Forward characteristic
of reverse diode
1000
I_D = 11 A
750
12
I_D = 18 A pulsed
10
V_DS = 120 V
8
1 20 V
40 0V
6
4
2
0
0
10
20
30
40
50
60
Q _gate [nC]
Fig. 8 Typ. gate charge
700
I_D = 0.25 mA
660
500
620
250
580
10 ⁵
V_GS = 0 V
f = 1 MHz
10 ⁴
Ciss
10 ³
Coss
10 ²
10 ¹
Crss
10 ⁰
0
50
100
150
200
V _DS [V]
Fig. 9 Typ. capacitances
10 ⁰
0.5
10 ^{-1 0.2}
0.1
0.05
0.02
10 ^-2 0.01
single pulse
D = t_p/T
0
20
60
100
140
T _j [°C]
Fig. 10 Avalanche energy
540
180
-60 -20
20
60
100 140 180
T _j [°C]
Fig. 11 Drain-source breakdown voltage
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10 ^-3
10 ^-6
10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
10 ⁰
t _p [s]
Fig. 12 Max. transient thermal
impedance
20090209c
4-4