IXFX44N80Q3 Datasheet, PDF (4/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

IXFK44N80Q3
IXFX44N80Q3
Fig. 7. Input Admittance
70
60
50
T_J = 125ºC
25ºC
- 40ºC
40
30
20
10
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V_GS - Volts
Fig. 8. Transconductance
60
T_J = - 40ºC
50
25ºC
40
125ºC
30
20
10
0
0
10
20
30
40
50
60
70
I_D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
140
120
100
80
60
T_J = 125ºC
40
T_J = 25ºC
20
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V_SD - Volts
10
9
V_DS = 400V
I _D = 22A
8
I _G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0
40
80
120
160
200
240
Q_G - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 11. Capacitance
Ciss
Fig. 12. Forward-Bias Safe Operating Area
1000
R_DS(on) Limit
100
1,000
10
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
0.1
10
T_J = 150ºC
T_C = 25ºC
Single Pulse
100
V_DS - Volts
25µs
100µs
1ms
1,000