IXFT88N30P Datasheet, PDF (4/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

IXFT88N30P IXFH88N30P
IXFK88N30P
Fig. 7. Input Admittance
160
140
120
100
80
T_J = 125ºC
60
25ºC
- 40ºC
40
20
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V_GS - Volts
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
125ºC
20
40
60
80
100 120 140 160 180
I_D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240
200
160
120
80
T_J = 125ºC
40
T_J = 25ºC
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V_SD - Volts
10
V_DS = 150V
8
I _D = 44A
I _G = 10mA
6
Fig. 10. Gate Charge
4
2
0
0
20
40
60
80 100 120 140 160 180 200
Q_G - NanoCoulombs
10,000
1,000
Fig. 11. Capacitance
Ciss
Coss
1,000
100
Fig. 12. Forward-Bias Safe Operating Area
R_DS(on) Limit
1ms
10ms
100µs
25µs
DC
10
Crss
f = 1 MHz
100
0
5
10
15
20
25
30
35
40
V_DS - Volts
T_J = 150ºC
T_C = 25ºC
Single Pulse
1
1
10
100
V_DS - Volts
1000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.