IXFK80N50Q3 Datasheet, PDF (4/5 Pages) IXYS Corporation – HiperFET Power MOSFETs Q3-Class

IXFK80N50Q3
IXFX80N50Q3
Fig. 7. Input Admittance
120
100
80
T_J = 125ºC
25ºC
- 40ºC
60
40
20
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
V_GS - Volts
100
80
60
40
20
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
125ºC
20
40
60
80
100
120
I_D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240
200
160
120
80
T_J = 125ºC
40
T_J = 25ºC
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V_SD - Volts
16
V_DS = 250V
14
I _D = 40A
I _G = 10mA
12
Fig. 10. Gate Charge
10
8
6
4
2
0
0
40
80
120
160
200
240
280
Q_G - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 11. Capacitance
Ciss
Fig. 12. Forward-Bias Safe Operating Area
1000
R_DS(on) Limit
100
100µs
1,000
10
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
0.1
10
T_J = 150ºC
T_C = 25ºC
Single Pulse
100
V_DS - Volts
1ms
1,000