IXFK40N90P Datasheet, PDF (4/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

IXFK40N90P
IXFX40N90P
Fig. 7. Input Admittance
55
50
45
40
35
T_J = 125ºC
25ºC
30
- 40ºC
25
20
15
10
5
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
120
100
80
60
40
T_J = 125ºC
20
T_J = 25ºC
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V_SD - Volts
100,000
10,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
1,000
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
55
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
125ºC
5 10 15 20 25 30 35 40 45 50 55
I_D - Amperes
Fig. 10. Gate Charge
16
V_DS = 450V
14
I _D = 20A
12
I _G = 10mA
10
8
6
4
2
0
0
50
100
150
200
250
300
350
Q_G - NanoCoulombs
1.000
Fig. 12. Maximum Transient Thermal
Im pedance
0.100
0.010
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: F_40N90P(96)10-23-08