IXFK250N10P Datasheet, PDF (4/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

IXFK250N10P
IXFX250N10P
Fig. 7. Input Admittance
200
180
160
140
T_J = 150ºC
120
25ºC
- 40ºC
100
80
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V_GS - Volts
Fig. 8. Transconductance
140
T_J = - 40ºC
120
100
25ºC
80
150ºC
60
40
20
0
0
20 40 60 80 100 120 140 160 180 200
I_D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350
300
250
200
150
100
T_J = 150ºC
50
T_J = 25ºC
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V_SD - Volts
10
9
V_DS = 50V
I _D = 125A
8
I _G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160 180 200 220
Q_G - NanoCoulombs
100,000
10,000
f = 1 MHz
1,000
Fig. 11. Capacitance
Cisss
Coss
1,000
100
Fig. 12. Forward-Bias Safe Operating Area
R_DS(on) Limit
External Lead Limit
25µs
100µs
1ms
100
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
10
T_J = 175ºC
T_C = 25ºC
Single Pulse
1
1
10ms
100ms
DC
10
100
V_DS - Volts
1000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.