IXFH230N075T2 Datasheet, PDF (4/6 Pages) IXYS Corporation – TrenchT2 HiperFET Power MOSFET

IXFH230N075T2
Fig. 7. Input Admittance
160
140
120
T_J = 150ºC
100
25ºC
- 40ºC
80
60
40
20
Fig. 8. Transconductance
140
T_J = - 40ºC
120
100
25ºC
80
150ºC
60
40
20
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V_GS - Volts
0
0
20
40
60
80
100
120
140
160
I_D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
270
240
210
180
150
120
90
T_J = 150ºC
60
T_J = 25ºC
30
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
V_SD - Volts
10
9
8
7
6
5
4
3
2
1
0
0
V_DS = 38V
I _D = 115A
I _G = 10mA
20
40
Fig. 10. Gate Charge
60
80
100 120 140 160 180
Q_G - NanoCoulombs
100,000
f = 1 MHz
10,000
1,000
Fig. 11. Capacitance
Ciss
Coss
FFigig. .1122. .FFoorrwwaarrdd-B-BiaiassSSaafefeOOppeerraatitninggAArreeaa
1000
RR_DDSS((oonn)) LLiimmiitt
100
EExxtteerrnnaallLLeeaaddCCuurrrreennttLLimimitit
2255µµss
110000µµss
10
11mmss
Crss
100
1
0
5
10
15
20
25
30
35
40
1
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
V_DS - Volts
1100mmss
DDCC
110000mmss
110000