IXFH170N10P Datasheet, PDF (4/5 Pages) IXYS Corporation – Polar HiperFET Power MOSFET

IXFH170N10P
IXFK170N10P
320
280
240
200
160
120
80
40
0
3
350
300
250
200
150
100
50
0
0
Fig. 7. Input Admittance
T_J = - 40ºC
25ºC
150ºC
4
5
6
7
8
9
10
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
T_J = 25ºC
T_J = 150ºC
0.2
0.4
0.6
0.8
1
V_SD - Volts
1.2
1.4
1.6
Fig. 8. Transconductance
120
T_J = - 40ºC
100
80
25ºC
60
150ºC
40
20
0
0
40
80
120
160
200
240
280
320
I_D - Amperes
10
9
8
7
6
5
4
3
2
1
0
0
V_DS = 50V
I _D = 85A
I _G = 10mA
20 40
Fig. 10. Gate Charge
60 80 100 120 140 160 180 200
Q_G - NanoCoulombs
100,000
f = 1 MHz
Fig. 11. Capacitance
10,000
Ciss
1,000
100
Fig. 12. Forward-Bias Safe Operating Area
R_DS(on) Limit
10ms
1ms
DC
100µs
1,000
Coss
10
Crss
T_J = 175ºC
T_C = 25ºC
Single Pulse
100
1
0
5
10
15
20
25
30
35
40
1
10
100
V_DS - Volts
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.