IXFH150N17T Datasheet, PDF (4/5 Pages) IXYS Corporation – TrenchHV Power MOSFET HiperFET

IXFH150N17T
Fig. 7. Input Admittance
160
140
120
100
T_J = 150ºC
80
25ºC
- 40ºC
60
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
270
240
210
180
150
120
90
T_J = 150ºC
60
T_J = 25ºC
30
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V_SD - Volts
100,000
10,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
1,000
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
160
140
120
100
80
60
40
20
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
150ºC
20
40
60
80
100
120
140
160
I_D - Amperes
Fig. 10. Gate Charge
10
9
V_DS = 85V
8
I _D = 25A
I _G = 10mA
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
Q_G - NanoCoulombs
1.000
Fig. 12. Maximum Transient Thermal
Im pedance
0.100
0.010
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: T_150N17T(8W)12-02-08-A