MIXA600CF650TSF Datasheet, PDF (3/4 Pages) IXYS Corporation – XPT IGBT Module

MIXA600CF650TSF
Package SimBus F
Symbol
I _RMS
T_stg
T _VJ
Weight
Definition
RMS current
storage temperature
virtual junction temperature
Conditions
per terminal
M_D
M
T
d Spp/App
d Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
Rpin-chip
resistance pin to chip
V = V_CEsat + 2·R·I_C resp. V = V_F + 2·R·I_F
tentative
Ratings
min. typ. max. Unit
A
-40
125 °C
-40
175 °C
350
g
3
6 Nm
3
6 Nm
12.7
mm
10.0
mm
3000
V
2500
V
0.65
mΩ
2D Data Matrix
XXX XX-XXXXX YYWWx
Logo UL Part number Date Code Location
Part number
M = Module
I = IGBT
X = XPT IGBT
A = Gen 1 / std
600 = Current Rating [A]
CF = Common collector + free wheeling diodes
650 = Reverse Voltage [V]
T = Thermistor \ Temperature sensor
SF = SimBus F
Ordering
Standard
Part Number
MIXA600CF650TSF
Marking on Product
MIXA600CF650TSF
Delivery Mode
Box
Quantity Code No.
3
10⁵
Temperature Sensor NTC
Symbol
R₂₅
B _25/50
Definition
resistance
temperature coefficient
Conditions
T_VJ = 25°
min. typ. max. Unit
4.75
5 5.25 kΩ
3375
K
Equivalent Circuits for Simulation
* on die level
T _VJ = 175 °C
10⁴
R
[]
10³
I ^V0
R0
V _{0 max}
R_{0 max}
threshold voltage
slope resistance *
IGBT
1.1
1.8
Diode
1.21
V
1 mΩ
10²
0
25 50 75 100 125 150
T_C [°C]
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121107