IXTY1R6N50D2 Datasheet, PDF (3/5 Pages) IXYS Corporation – Depletion Mode MOSFET

IXTY1R6N50D2 IXTA1R6N50D2
IXTP1R6N50D2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
Fig. 1. Output Characteristics @ T_J = 25ºC
V_GS = 5V
3V
2V
1V
0V
-1V
-2V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Volts
Fig. 2. Extended Output Characteristics @ T_J = 25ºC
10
V_GS = 5V
9
3V
8
7
2V
6
1V
5
4
0V
3
2
-1V
1
-2V
0
0
5
10
15
20
25
30
V_DS - Volts
Fig. 3. Output Characteristics @ T_J = 125ºC
1.6
V_GS = 5V
1.4
2V
1V
1.2
0V
1.0
-1V
1E+00
1E-01
1E-02
0.8
1E-03
0.6
1E-04
0.4
-2V
1E-05
0.2
-3V
0.0
1E-06
0
1
2
3
4
5
6
0
V_DS - Volts
Fig. 4. Drain Current @ T_J = 25ºC
V_GS = - 2.25V
- 2.50V
- 2.75V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
100
200
300
400
500
600
V_DS - Volts
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0
Fig. 5. Drain Current @ T_J = 100ºC
V_GS = -2.50V
-2.75V
-3.00V
-3.25V
-3.50V
-3.75V
-4.00V
100
200
300
400
500
600
V_DS - Volts
1.E+08
1.E+07
Fig. 6. Dynamic Resistance vs. Gate Voltage
∆V_DS = 350V - 100V
1.E+06
1.E+05
1.E+04
T_J = 100ºC
T_J = 25ºC
1.E+03
-4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -2.2
V_GS - Volts
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