IXSK50N60AU1 Datasheet, PDF (3/6 Pages) IXYS Corporation – IGBT with Diode

Fig. 1 Saturation Characteristics
80
70
60
50
40
30
20
10
0
0
T_J = 25°C
V_GE = 15V
13V
11V
9V
7V
1
2
3
4
5
V_CE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
T_J = 25°C
8
7
6
5
I_C = 80A
4
3
I_C = 40A
2
I_C = 20A
1
0
8 9 10 11 12 13 14 15
V_GE - Volts
Fig. 5 Input Admittance
80
V_CE = 10V
70
60
50
40
T_J = 25°C
30
20
T_J = 125°C
T_J = - 40°C
10
0
4 5 6 7 8 9 10 11 12 13
V_GE - Volts
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IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]
IXSK 50N60AU1
Fig. 2
Output Characterstics
200
180 ^{TJ = 25°C}
160
140
120
100
80
60
40
20
0
0246
V_GE = 15V
13V
11V
9V
7V
8 10 12 14 16 18 20
V_CE - Volts
Fig. 4
Temperature Dependence
of Output Saturation Voltage
1.5
1.4
V_GE=15 V
1.3
I_C = 80A
1.2
1.1
I_C = 40A
1.0
0.9
I_C = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2
BV _CES
I_C = 3mA
1.1
1.0
0.9
0.8
0.7
-50 -25 0
V_GE8th)
I_C = 4mA
25 50 75 100 125 150
T_J - Degrees C
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]