IXSH45N100 Datasheet, PDF (3/4 Pages) IXYS Corporation – Low VCE(sat) IGBT - Short Circuit SOA Capability

Fig.1 Saturation Characteristics
70
V_GE = 15V 13V
60
T_J = 25°C
50
40
30
20
10
0
0
1
2
3
V_CE - Volts
11V
9V
7V
4
5
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 ^{TJ = 25°C}
8
7
6
5
4
I_C = 90A
3
I_C = 45A
2
1
I_C = 22.5A
0
8 9 10 11 12 13 14 15
V_GE - Volts
Fig.5 Input Admittance
90
V_CE = 10V
80
70
60
50
40
T_J = 25°C
30
T_J = 125°C
20
T_J = - 40°C
10
0
4 5 6 7 8 9 10 11 12 13 14 15
V_GE - Volts
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IXSH 45N100 IXSM 45N100
Fig.2 Output Characterstics
300
T_J = 25°C
250
200
150
V_GE = 15V
13V
100
11V
50
9V
0
0 2 4 6 8 10 12 14 16 18 20
V_CE - Volts
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.8
V_GE = 15V
1.6
I_C = 90A
1.4
1.2
I_C = 45A
1.0
I_C = 22.5A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2
V_GE(th)
1.1
I_C = 4mA
1.0
0.9 ^BVCES
I_C = 3mA
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C
3-4