IXGH48N60B3C1 Datasheet, PDF (3/6 Pages) IXYS Corporation – GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

IXGH48N60B3C1
80
70
60
50
40
30
20
10
0
0.0
80
70
60
50
40
30
20
10
0
0.0
3.6
3.2
2.8
2.4
Fig. 1. Output Characteristics
@ 25ºC
V_GE = 15V
13V
11V
9V
7V
5V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V_CE - Volts
Fig. 3. Output Characteristics
@ 125ºC
V_GE = 15V
13V
11V
9V
7V
5V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V_CE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
I _C = 80A
40A
20A
T_J = 25ºC
2.0
1.6
1.2
5
6
7
8
9
10
11
12
13
14
15
V_GE - Volts
Fig. 2. Extended Output Characteristics
@ 25ºC
300
V_GE = 15V
250
13V
11V
200
9V
150
100
50
7V
0
0
2
4
6
8
10
12
14
16
V_CE - Volts
Fig. 4. Dependence of V_CE(sat) on
Junction Temperature
1.4
1.3
V_GE = 15V
1.2
I _C = 80A
1.1
I _C = 40A
1.0
0.9
0.8
0.7
-50
-25
I _C = 20A
0
25
50
75
100
125
150
T_J - Degrees Centigrade
Fig. 6. Input Admittance
200
180
160
140
120
100
80
60
T_J = 125ºC
40
25ºC
- 40ºC
20
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V_GE - Volts
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