IXGH10N170A Datasheet, PDF (3/5 Pages) IXYS Corporation – High Voltage IGBT

Fig. 1. Output Characteristics
@ 25 Deg. C
10
9
8
V_GE = 17V
1 5V
1 3V
9V
1 1V
7
6
7V
5
4
3
2
1
0
1
2
3
4
5
6
7
8
9
V_CE - Volts
10
9
8
7
6
5
4
3
2
1
0
1
Fig. 3. Output Characteristics
@ 125 Deg. C
V_GE = 17V
15V
13V
9V
1 1V
7V
2 3 4 5 6 7 8 9 10
V_CE - Volts
12
11
10
9
8
7
6
5
4
3
5
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
T _J = 25º C
I C = 10A
5A
2.5A
6 7 8 9 10 11 12 13 14 15
V_GE - Volts
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IXGH 10N170A
IXGT 10N170A
Fig. 2. Extended Output Characteristics
@ 25 deg. C
40
V_GE = 17V
35
15V
30
13V
25
1 1V
20
15
9V
10
5
7V
0
0
5
10
15
20
25
30
V_CE - Volts
Fig. 4. T emperature Dependence of V_CE(sat)
2.6
2.4
V_GE = 15V
2.2
2
I _C= 10A
1.8
1.6
1.4
I _C = 5A
1.2
1
I _C = 2.5A
0.8
-50 -25
0 25 50 75 100 125 150
T_J - Degrees Centigrade
Fig. 6. Input Admittance
15
12.5
10
7.5
5
T_J = 125º C
2.5
25º C
-40º C
0
4
5
6
7
8
9
V_GE - Volts