IXGH10N100U1 Datasheet, PDF (3/6 Pages) IXYS Corporation – Low VCE(sat) IGBT with Diode, High speed IGBT with Diode

IXGH 10N100U1
IXGH 10N100AU1
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
20
18 ^{TJ = 25°C}
16
14
12
10
8
6
4
2
0
0
1
V_GE = 15V
13V
11V
9V
7V
2
3
4
5
V_CE - Volts
80
T_J = 25°C
70
60
V_GE = 15V
13V
50
40
11V
30
9V
20
10
7V
0
0 2 4 6 8 10 12 14 16 18 20
V_CE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 ^{TJ = 25°C}
8
7
6
5
I_C = 20A
4
I_C = 10A
3
2
I_C = 5A
1
0
5 6 7 8 9 10 11 12 13 14 15
V_GE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
V_GE = 15V
1.4
1.3
I_C = 20A
1.2
1.1
I_C = 10A
1.0
0.9
I_C = 5A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C
Fig. 5 Input Admittance
20
18
V_CE = 10V
16
14
12
10
8
6
4
2
0
0123
T_J = 125°C
T_J = 25°C
T_J = - 40°C
4 5 6 7 8 9 10
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2
V_GE(th)
I_C = 250µA
1.1
1.0
0.9
BV_CES
0.8
I_C = 3mA
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
V_GE - Volts
10N100p1.JNB
T_J - Degrees C
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