IXFM6N90 Datasheet, PDF (3/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

Fig. 1 Output Characteristics
9
8
T_J =25°C
7
6
5
4
3
2
1
0
0
5
10
V_GS = 10V
15 20
V_DS - Volts
6V
5V
25 30
Fig. 3 R_DS(on) vs. Drain Current
3.0
T_J =25°C
2.8
2.6
2.4
V_GS= 10V
2.2
V_GS= 15V
2.0
1.8
0
2
4
6
8
10
I_D - Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
6N90
5
4
6N100
3
2
1
0
-50 -25 0 25 50 75 100 125 150
T_C - Degrees C
IXFH 6N90
IXFM 6N90
IXFH 6N100
IXFM 6N100
Fig. 2 Input Admittance
9
8
7
6
5
T_J = 25°C
4
T_J = 125°C
3
2
T_J = - 55°C
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V_GS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
I_D = 3.0A
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V_GS(th)
BV_DSS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
T_J- Degrees C
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