IXFK160N30T Datasheet, PDF (3/5 Pages) IXYS Corporation – GigaMOS Power MOSFET

Fig. 1. Output Characteristics
@ 25ºC
160
140
V_GS = 10V
7V
120
6V
100
80
5.5V
60
40
20
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V_DS - Volts
Fig. 3. Output Characteristics
@ 125ºC
160
V_GS = 10V
140
7V
120
6V
100
80
5V
60
40
20
0
0
1
2
3
4
5
6
7
V_DS - Volts
Fig. 5. R_DS(on) Normalized to I_D = 80A Value
vs. Drain Current
2.8
2.6
V_GS = 10V
2.4
T_J = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
T_J = 25ºC
0.8
0.6
0
40
80
120
160
200
240
280
I_D - Amperes
IXFK160N30T
IXFX160N30T
Fig. 2. Extended Output Characteristics
@ 25ºC
300
V_GS = 10V
7V
250
200
6V
150
5.5V
100
50
5V
0
0
2
4
6
8 10 12 14 16 18 20
V_DS - Volts
Fig. 4. R_DS(on) Normalized to I_D = 80A Value
vs. Junction Temperature
2.8
2.6
V_GS = 10V
2.4
2.2
2.0
I _D = 160A
1.8
I _D = 80A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150
T_J - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
160
140
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125 150
T_C - Degrees Centigrade
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