GWM160-0055P3 Datasheet, PDF (3/3 Pages) IXYS Corporation – Three phase full bridge with Trench MOSFETs in DCB isolated high current package

GWM 160-0055P3
1.2
V
0.9
V_DS
0.6
V_GS = 8 V
10 V
12 V
2.0
1.5
R_DSon
R_{DSon(25°C)}
1.0
0.3
0.5
T_VJ = 25°C
0.0
0
100
200
300 A
I_D
Fig. 1: typ. output characteristics
[V_DS = I_D (R_DSon + 2x R_{pin to chip})]
300
A
250
I_D
200
150
100
0.0
-50 0
50 100 150 C
T_VJ
Fig. 2: typ. dependence of R_DSon on temperature
10
V
V_GS ⁸
I_D = 25 A
6
V_DS = 14 V
4
V_DS = 44 V
50
T_VJ = 125°C
T_VJ = 25°C
0
0 1 2 3 4 5 6 7 V8
V_GS
Fig. 3: typ.transfer characteristics
2
0
0 20 40 60 80 n1C00
Q_G
Fig. 4: typ. gate charge characteristics
400
A ^V_GS ^{= 0 V}
350
300
-I_D
250
1
K/W
0.1
Z_thJC
200
0.01
150
T_VJ = 125°C
100
0.001
50
T_VJ = 25°C
0
00.0 0.2 0.4 0.6 0.8 1.0 1.2 1V.4
V_SD
Fig. 5: typ. conduction characteristics
of body diode
0.0001
0.00001 0.0001 0.001
0.01
0.1
Fig. 6: typ. transient thermal impedance
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1 ^s 10
t
3-3