CPC5602 Datasheet, PDF (3/5 Pages) Clare, Inc. – N Channel Depletion Mode FET

INTEGRATED CIRCUITS DIVISION
CPC5602
PERFORMANCE DATA*
Output Characteristics
0.35
(T_A=25ºC)
0.30
0.25
0.20
V_GS=-0.5
V_GS=-1
V_GS=-1.5
V_GS=-2
0.15
0.10
0.05
On-Resistance vs. Drain Current
(V =0V)
GS
20
15
10
5
Transconductance vs Drain Current
300
T_A=-40ºC
250
T_A=25ºC
(V =10V)
DS
200
T_A=125ºC
150
100
50
0.00
0
0
0
1
2
3
4
5
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0
V_DS (V)
I_D (A)
50
100
150
I_D (mA)
250
200
150
100
50
0
-3.0
Transfer Characteristics
(V_DS=10V)
T_A=125ºC
T_A=25ºC
T_A=-40ºC
-2.5
-2.0
-1.5
V_GS (V)
V_GS(off) vs. Temperature
(V_DS=10V, I_D=2PA)
-2.3
-2.4
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
-1.0
-40 -20 0 20 40 60 80 100
Temperature (ºC)
On-Resistance vs. Temperature
(V_GS=0V, I_D=100mA)
12
11
10
9
8
7
6
5
4
-40 -20
0 20 40 60
Temperature (ºC)
80 100
Capacitance vs. Drain-Source Voltage
(V =-5V)
GS
300
250
200
C_ISS
C_OSS
C_RSS
150
100
50
0
0
5
10 15 20 25 30
V (V)
DS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Power Dissipation
vs. Ambient Temperature
20 40 60 80 100 120 140 160
Temperature (ºC)
1
0.1
0.01
0.001
1
Forward Safe Operating Bias
(V_GS=0V, DC Load, T_C=25ºC)
Limited by
Device Channel
Saturation
Limited by
Device R_DS(on)
10
100
V_DS (V)
1000
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R10
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