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| VUM33-05 Datasheet, PDF (2/4 Pages) IXYS Corporation – Power MOSFET Stage for Boost Converters | |||
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VUM 33-05
Symbol
VDSS
V
GS(th)
I
GSS
IDSS
RDS(on)
RGint
gfs
VDS
td(on)
t
d(off)
C
iss
Coss
Crss
Qg
RthJS
VF
IR
VT0
rT
IRM
RthJS
V
F
IR
VT0
rT
RthJS
Test Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
350
A V = 0.8V
R
RRM
300
VGS = 0 V, ID = 2 mA
V = 20 V, I = 20 mA
DS
D
V
GS
= ±20 V,
V =0V
DS
VDS = 500 V, VGS = 0 V
TVJ = 25°C
TVJ = 25°C
500
V
250
2
5
V
IFSM
200
±500 nA
TVJ= 45°C
150
2 mA
100
0.12 W
1.5 W
50
TVJ= 125°C
VDS = 15 V, IDS = 12 A
IDS = 24 A, VGS = 0 V
V = 250 V, I = 12 A, V = 10 V
DS
DS
GS
Zgen. = 1 W, L-load
30
S
0
1.5 V
0.001
0.01
0.1 s 1
t
100 ns
220 ns
Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
V = 25 V, f = 1 MHz, V = 0 V
DS
GS
VDS = 250 V, ID = 12 A, VGS = 10 V
IF = 33 A; TVJ = 25°C
TVJ =150°C
VR = 600 V, TVJ = 25°C
V
R
= 480 V,
T=
VJ
25°C
TVJ =125°C
For power-loss calculations only
TVJ = 125°C
IF = 30 A; -diF/dt = 240 A/ms
VR = 350 V, TVJ = 100°C
I
F
= 20 A,
T=
VJ
25°C
TVJ =125°C
VR = 800 V TVJ = 25°C
V
R
= 640 V,
T
VJ
=125°C
For power-loss calculations only
TVJ = 125°C
8.5
nF
0.9
nF
0.3
nF
350
nC
0.21 K/W
1.75 V
1.5 V
1.5 mA
0.25 mA
7 mA
1.21 V
9 mW
10 11 A
1.1 K/W
1.5 V
1.5 V
0.25 mA
2 mA
1.18 V
12 mW
1.3 K/W
500
A2s
400
300
I2t
200
TVJ= 45°C
100
TVJ= 125°C
0
1
t
ms 10
Fig. 2 I2t for fusing (Rectifier Diodes)
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
2-4
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