VBO36-16NO8 Datasheet, PDF (2/2 Pages) IXYS Corporation – Single Phase Rectifier Bridge

VBO 36
200
1.9
1.8
I_FSM [A]
T_VJ = 45°C T_VJ = 150°C
1.6
480
500
150
1.4
100
1.2
50
150°C
25°C
0
0.5 1 1.5 2 2.5
V_F [V]
Fig. 1 Forward current versus
voltage drop per diode
70
60
50
1.0
0 V_RRM
0.8
½ V_RRM
0.6
1 V_RRM
0.4
10⁰
10¹
10²
10³
t [ms]
Fig. 2 Surge overload current per diode
I_FSM: crest value, t: duration
50
0.36 = R_thCA [K/W]
65
0.71
75
40
1.43
90
30
DC
2.86
105
sin. 180°
20
rec. 120°
120
rec. 60°
rec. 30°
7.14
10
135
0
150
10
20
0
50
100
150
I_FAVM [A]
T_amb [K]
Fig. 4 Power dissipation vs. direct output current and ambient temperature
8
Z_thJK
6
Z_thJC
4
10⁴
10³
45°C
150°C
10²
1
2
4 6 10
t [ms]
Fig. 3 I²t versus time (1-10 ms)
per diode or thyristor
50
DC
sin. 180°
40
rec. 120°
rec. 60°
rec. 30°
30
20
10
0
50 100 150 200
T_C [°C]
Fig. 5 Maximum forward current
at case temperature
2
0
0.01
0.1
1
10
100
t [s]
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
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20100706b
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