VBO125 Datasheet, PDF (2/2 Pages) IXYS Corporation – Single Phase Rectifier Bridge

VBO 125
200
A
160
T=150°C
120
I-I-FFS(-MO-V-)-
1.6
1.4
1.2
IFSM (A)
TVJ=45°C TVJ=150°C
1800
1600
80
40
T=25°C
IF
0
VF ¹
1.5 _V
Fig. 1 Forward current versus
voltage drop per diode
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
0
1
2
3
10
10 t[ms] 10
10
Fig. 2 Surge overload current per diode
I_FSM: Crest value. t: duration
300
[W] PSB 125
250
TC
85
0.19 0.11 = RTHCA [K/W]
90
0.28
95
100
200
105
0.44
110
115
150
120
0.77
125
100
DC
130
50
PVTOT
0
50
IFAVM
sin.180°
rec.120°
rec.60°
rec.30°
1.77
100 ₀
50
[A]
Tamb
100
135
140
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
1.5
K/W
1
Z _thJK
Z _thJC
5
10
2
As
TVJ=45°C
4
10
TVJ=150°C
3
10
1
2
46
10
t [ms]
Fig. 3 ∫i²dt versus time
(1-10ms) per diode or thyristor
150
[A]
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
F4
0.5
Zth
0.01
0.1 _t[s] 1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
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