VBE100-06NO7 Datasheet, PDF (2/2 Pages) IXYS Corporation – Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

VBE 100-06NO7
160
A
140
120
I_F
100
80
T_VJ = 25°C
T_VJ = 100°C
T_VJ = 150°C
60
40
20
0
DWLP55-06
0
1
2V
V_F
Fig. 1 Forward current I versus V
F
F
2.0
1.5
K_f
1.0
I_RM
0.5
Q_r
4000
nC
T_VJ = 100°C
V_R = 300 V
3000
Q_r
2000
I_F = 120 A
I_F = 60 A
I_F = 30 A
1000
0
100
DWLP55-06
A/µs 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q
r
versus -di_F/dt
140
ns
130
t_rr
120
110
T_VJ = 100°C
V_R = 300 V
I_F = 120 A
I_F = 60 A
I_F = 30 A
100
90
0.0
0
DWLP55-06
40
80 120 C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
1
K/W
0.1
Z_thJC
80
0
DWLP55-06
200 400 600 A8/0µ0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
80
T_VJ = 100°C
A ^{VR = 300 V}
60
I_RM
40
I_F = 120 A
I_F = 60 A
I_F = 30 A
20
0
DWLP55-06
0 200 400 600 A80/µ0s 1000
-di_F/dt
Fig. 3 Peak reverse current I
RM
versus -di_F/dt
B3
20
1.6
V
V_FR
t_rr
15
µs
V_FR
t_fr
1.2
10
T_VJ = 100°C
0.8
I_F = 60 A
5
0.4
0
0.0 ^DWLP55-06
0 200 400 600 A80/µ0s 1000
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di_F/dt
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 7 Typical transient thermal resistance junction to case
0.1
VUE 130-06
s
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
IXYS reserves the right to change limits, test conditions and dimensions.
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