 English |
|
|
|
|
|
|
|
| MID300-12A4 Datasheet, PDF (2/4 Pages) IXYS Corporation – IGBT Modules | |||
| |||
| ◁ |
MII 300-12 A4 MID 300-12 A4
MDI 300-12 A4
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthJS
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 8 mA, VCE = VGE
VCE = VCES
VCE = 0 V, VGE = ±20 V
IC = 200 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive load, TJ = 125°C
IC = 200 A, VGE = ±15 V
VCE = 600 V, RG = 3.3 W
with heatsink compound
1200
4.5
V
6.5 V
13 mA
20
mA
±800 nA
2.2 2.7 V
13
nF
2
nF
1
nF
100
ns
60
ns
600
ns
90
ns
32
mJ
29
mJ
0.09 K/W
0.18
K/W
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
RthJC
RthJS
IF = 200 A, VGE = 0 V,
IF = 200 A, VGE = 0 V, TJ = 125°C
TC = 25°C
TC = 80°C
IF = 200 A, VGE = 0 V, -diF/dt = 1800 A/ms
TJ = 125°C, VR = 600 V
with heatsink compound
2.2 2.5 V
1.7 2.3 V
450 A
280 A
180
A
200
ns
0.15 K/W
0.3
K/W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.3 V; R0 = 6.2 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 2.4 mW
Thermal Response
© 2000 IXYS All rights reserved
IGBT (typ.)
Cth1 = 0.50 J/K; Rth1 = 0.088 K/W
Cth2 = 1.16 J/K; Rth2 = 0.002 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.44 J/K; Rth1 = 0.146 K/W
Cth2 = 0.80 J/K; Rth2 = 0.003 K/W
2-4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese