MEO500-06DA Datasheet, PDF (2/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED) Module

MEO 500-06 DA
800
A
600
I_F
400
T_VJ=125°C
T_VJ=25°C
200
20 _{TVJ= 100°C}
µC ^{VR = 300V}
Q_{r 15}
I_F=1200A
10
I_F= 600A
I_F= 300A
5
200 _{TVJ= 100°C}
I_RM ^{A VR = 300V}
150
I_F=1200A
100 ^IF^{= 600A}
I_F= 300A
50
0
0.0 0.4 0.8 1.2 1.6 V 2.0
V_F
Fig. 1 Forward current I_F versus
max. voltage drop V per leg
F
1.4
1.2
K_f
1.0
0.8
I_RM
0.6
Q_r
0
100
A/ms 1000
-di_F/dt
Fig. 2 Typ. reverse recovery
charge Q versus -di /dt
r
F
450
ns
400
t_rr
350
300
T_VJ= 100°C
V_R = 300V
I_F=1200A
I_F= 600A
I = 300A
F
250
0
0 200 400 600 A8/0m0s 1000
-di_F/dt
Fig. 3 Typ. peak reverse current I_RM
versus -di /dt
F
60
V
t_fr
50
V_FR
40
30
T_VJ= 100°C
I_F = 600A
V_FR
3.0
µs
2.5
t_fr
2.0
1.5
20
1.0
10
0.5
0.4
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus junction temperature T_VJ
0.12
K/W
0.10
0.08
Z_tthhJJSH
0.06
200
0 200 400 600 A8/0m0s
-di_F/dt
Fig. 5 Typ. recovery time t_rr
versus -di_F/dt
1000
0
0.0
0 200 400 600 A80/m0s 1000
di_F/dt
Fig. 6 Typ. peak forward voltage V_FR
and t_fr versus di_F/dt
Constants for Z calculation:
thJS
i
R_thi (K/W)
t_i (s)
1
0.001
2
0.004
3
0.027
4
0.082
0.08
0.024
0.112
0.464
0.04
0.02
0.00
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to heatsink
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