L048 Datasheet, PDF (2/2 Pages) IXYS Corporation – Three Phase Half Controlled Rectifier Bridge, B6HK

VVZ 110
VVZ 175
Symbol
I ,I
RD
V_F, V_T
V_T0
r_T
V
GT
I
GT
V_GD
I_GD
I_L
I_H
t
gd
R_thJC
R_thJH
d_S
d
A
a
Test Conditions
V =V ;V =V
R
RRM D
DRM
T =T
VJ
VJM
T_VJ = 25°C
I_F, I_T = 200 A, T_VJ = 25°C
For power-loss calculations only
(T_VJ = 125°C)
V = 6 V;
D
V = 6 V;
D
T
VJ
=
25°C
T_VJ = -40°C
T
VJ
=
25°C
T_VJ = -40°C
T_VJ = T_VJM;
T_VJ = T_VJM;
V_D = 2/3 V_DRM
V_D = 2/3 V_DRM
I_G = 0.3 A; t_G = 30 ms
di_G/dt = 0.3 A/ms
T_VJ = 25°C
T_VJ = 25°C; V_D = 6 V; R_GK = ¥
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
I_G = 0.3 A; di_G/dt = 0.3 A/ms
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Characteristic Values
VVZ 110 VVZ 175
£
5
mA
£
0.3
mA
£ 1.75
1.57
V
0.85
0.85
V
6
3.5 mW
£
1.5
V
£
1.6
V
£
100
mA
£
200
mA
£
0.2
V
£
5
mA
£
450
mA
£
200
mA
£
2
ms
0.65
0.108
0.8
0.133
0.46 K/W
0.077 K/W
0.55 K/W
0.092 K/W
10
mm
9.4
mm
50
m/s²
10
V
V_G
1: I_GT, T_VJ = 125°C
2: I_GT, T_VJ = 25°C
3: I_GT, T_VJ = -40°C
3
1
2
6
5
1
4
I_GD, T_VJ = 125°C
0.1
1
10
100
4: P_GAV = 0.5 W
5: P_GM = 5 W
6: P_GM = 10 W
1000 mA
I_G
Fig. 1 Gate trigger characteristics
120
A
100
I_dAV
VVZ 110
80
60
40
20
Dimensions in mm (1 mm = 0.0394")
M6x10
94
80
72
26
26
C~
D~
A+
B-
3
2
1
E~
4
5
6
12
25
66
900
A
800
I_FSM
700
600
VVZ 110
T_VJ = 45°C
500
400
T_VJ = 125°C
300
200
50 Hz
80% V_RRM
0
0
50
100 °C 150
T_C
Fig. 2 DC output current at case
temperature
0.7
K/W
0.6
Z_thJC
0.5
VVZ 110
0.4
0.3
0.2
0.1
100
0.0
10^-3
10^-2
10^-1
10⁰ s 10¹
10^-3
10^-2
10^-1
10⁰ s 10¹
t
t
Fig. 3 Surge overload current
I_FSM: Crest value, t: duration
Fig. 4 Transient thermal impedance
junction to case (per leg)
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