L016 Datasheet, PDF (2/3 Pages) IXYS Corporation – High Power Diode Modules

MDO 500
14000
I_TSM
120A00
10000
8000
50 Hz
80 % V_RRM
T_VJ = 45°C
T_VJ = 140°C
6000
4000
2000
0
0.001
0.01
0.1 s 1
t
Fig. 1 Surge overload current
I : Crest value, t: duration
FSM
1200
P_tot
W
1000
800
600
DC
180° sin
400
120°
60°
30°
200
10⁷
I²t
V_R = 0V
A²s
T_VJ = 45°C
10⁶
1000
9A00
I_FAVM
800
700
600
500
DC
180° sin
120°
60°
30°
T_VJ = 140°C
400
300
200
100
10⁵
1
t
Fig. 2 I²t versus time (1-10 ms)
ms 10
0
0 25 50 75 100 125 °C 150
T_C
Fig. 3 Maximum forward current
at case temperature
R_thKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
Fig. 4 Power dissipation versus
forward current and ambient
temperature
0
0
200 400 600 800 A 0
I_FAVM
25
50
75
100 1°2C5 150
T_A
3200
W
2800
P_tot
2400
2000
1600
1200
800
400
0
0
RL
Circuit
B2
4xMDO500
300 600 900 1200 A 0
I_dAVM
R_thKA K/W
0.015
0.03
0.04
0.05
0.07
0.01
0.14
25
50
75
100 1°2C5 150
T_A
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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