L011 Datasheet, PDF (2/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED) Module

MEO 550-02 DA
800
A
700
600
I_F
500
400
300
T_VJ=125°C
T_VJ= 25°C
200
100
0
0.0
0.5
1.0 V 1.5
V_F
Fig. 1 Forward current I versus
F
max. voltage drop V_F per leg
2.0
1.5
K_f
1.0
I_RM
0.5
Q_r
3.0
mC
2.5
Q_r
2.0
T_VJ= 100°C
V_R = 100V
I_F=1100A
I_F= 550A
I_F= 275A
1.5
1.0
0.5
0.0
100
A/ms 1000
-di_F/dt
Fig. 2 Typ. reverse recovery
charge Q_r versus -di_F/dt
220
ns
200
t_rr
180
T_VJ= 100°C
V_R = 100V
160
I_F=1100A
I_F= 550A
140
I_F= 275A
120
60
A
T_VJ= 100°C
V_R = 100V
50
I_RM
40
30
I_F=1100A
I_F= 550A
I_F= 275A
20
10
0
0 200 400 600 A8/0m0s 1000
-di_F/dt
Fig. 3 Typ. peak reverse current I
RM
versus -di_F/dt
60
T_VJ= 100°C
I_F = 550A
V
V_FR
V_FR
40
t_fr
6
µs
5
t_fr
4
3
20
2
1
0.0
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q , I
r RM
versus junction temperature T_VJ
1
K/W
100
0 200 400 600 A8/0m0s 1000
-di_F/dt
Fig. 5 Typ. recovery time t
rr
versus -di_F/dt
0.1
Z_tthhJJHS
0
0
0 200 400 600 A80/m0s 1000
di_F/dt
Fig. 6 Typ. peak forward voltage V
FR
and t_fr versus di_F/dt
Constants for Z_thJS calculation:
i
R_thi (K/W)
t_i (s)
1
0.001
2
0.004
3
0.027
4
0.082
0.08
0.024
0.112
0.464
0.01
0.001
0.001
0.01
0.1
1
Fig. 7 Transient thermal impedance junction to heatsink
MEO 550-02
s
10
t
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