IXYX40N450HV Datasheet, PDF (2/4 Pages) IXYS Corporation – Advance Technical Information

Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
g_fS
I_C = 40A, V_CE = 10V, Note 1
18
30
S
C_ies
C_oes
C_res
V_CE = 25V, V_GE = 0V, f = 1MHz
3550
pF
146
pF
67
pF
Q_g
Q_ge
I_C = 40A, V_GE = 15V, V_CE = 1000V
Q_gc
170
nC
19
nC
70
nC
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times, T_J = 25°C
I_C = 40A, V_GE = 15V
V_CE = 960V, R_G = 2
36
330
110
1120
ns
ns
ns
ns
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times, T_J = 125°C
I_C = 40A, V_GE = 15V
V_CE = 960V, R_G = 2
46
740
118
1010
ns
ns
ns
ns
R_thJC
R_thCS
0.19 °C/W
0.15
°C/W
IXYX40N450HV
TO-247PLUS-HV Outline
1 - Gate
2,4 - Emitter
3 - Collector
Note: 1. Pulse test, t < 300s, duty cycle, d < 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute
a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2