IXTP24N65X2M Datasheet, PDF (2/5 Pages) IXYS Corporation – Advance Technical Information

Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
g_fs
V_DS = 10V, I_D = 12A, Note 1
R_Gi
Gate Input Resistance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
C_o(er)
C_o(tr)
Effective Output Capacitance
Energy related
Time related
V_GS = 0V
V_DS = 0.8 • V_DSS
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCS
Resistive Switching Times
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 12A
R_G = 10 (External)
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 12A
Characteristic Values
Min. Typ. Max
13
22
S
1.1

2060
pF
1470
pF
1.2
pF
83
336
20
25
50
19
36
9
13
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
3.37 C/W
C/W
IXTP24N65X2M
OVERMOLDED TO-220
(IXTP...M)
12 3
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
I_S
V_GS = 0V
I_SM
Repetitive, pulse Width Limited by T_JM
V_SD
I_F = I_S, V_GS = 0V, Note 1
t_rr
Q_RM
I_RM
I_F = 12A, -di/dt = 100A/μs
V_R = 100V
Note 1. Pulse test, t  300s, duty cycle, d 2%.
Characteristic Values
Min. Typ. Max
24 A
96 A
1.4 V
390
ns
3.3 μC
17
A
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537