IXRH40N120 Datasheet, PDF (2/5 Pages) IXYS Corporation – IGBT with Reverse Blocking capability

IXRH 40N120
IGBT
Symbol
t
d(on)
t_r
t
d(off)
t_f
E
on
E_off
t
d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_{rec int}
I_RM
t_rr
R_thJC
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
typ.
External diode DSEP30-12 - diagram see Fig. 17
Inductive load, T_VJ = 125°C
V_CE = 600 V; I_C = 35 A
V_GE = ±15 V; R_G = 15 Ω
31 ns
54 ns
184 ns
24 ns
3.0 mJ
0.7 mJ
Internal diode - diagram see Fig. 18
Inductive load, T_VJ = 125°C
V_CE = 600 V; I_C = 35 A
V_GE = ±15 V; R_G = 15 Ω
29.5 ns
47 ns
183 ns
46 ns
19.2 mJ
1.0 mJ
7 mJ
I_F = 35 A; di_C/dt = -50 A/µs; T_VJ = 125°C
V_CE = -600 V; V_GE = 15 V
28.5 A
2.1 µs
0.42 K/W
Component
Symbol
T
VJ
T_stg
M_d
F_C
Conditions
mounting torque
mounting force with clip
Maximum Ratings
-55...+150
°C
-55...+125
°C
0.8 - 1.2
Nm
20...120
N
Symbol
R_thCH
Weight
Conditions
with heatsink compound
Characteristic Values
min. typ. max.
0.25
K/W
6
g
TO-247 AD Outline
Dim. Millimeter
Min. Max.
A
4.7 5.3
A₁
2.2 2.54
A₂
2.2 2.6
b
1.0 1.4
b₁ 1.65 2.13
b₂ 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions and dimensions.
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