IXGR60N60C2 Datasheet, PDF (2/6 Pages) IXYS Corporation – Lightspeed 2TM Series (Electrically Isolated Back Surface)

IXGR 60N60C2
IXGR 60N60C2D1
Symbol
g_fs
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_ri
t_d(off)
t_fi
E_off
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
R_thJ-DCB
R_thJC
R_thCS
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
I_C = 50 A; V_CE = 10 V,
Note 1
40 55
S
3900
pF
V_CE= 25 V, V_GE = 0 V, f = 1 MHz
60N60C2 280
pF
60N60C2D1 320
pF
97
pF
I_C = 50 A, V_GE = 15 V, V_CE = 0.5 V_CES
140
nC
28
nC
35
nC
Inductive load, T_J = 25°C
I_C = 50 A, V_GE = 15 V
V_CE = 400 V, R_G = R_off = 2.0 Ω
Inductive load, T_J = 125°C
I_C = 50 A, V_GE = 15 V
V_CE = 400 V, R_G = R_off = 2.0 Ω
(Note 2)
(Note 3)
18
ns
25
ns
95 150 ns
35
ns
0.49 0.8 mJ
18
ns
25
ns
1.6
mJ
130
ns
80
ns
0.92
mJ
0.25
K/W
0.50 K/W
0.15
K/W
ISOPLUS 247 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_F
I_RM
t_rr
R_thJC
I_F = 60 A, V_GE = 0 V,
Note 1
T_J = 150°C
VI^FR==6100A0, VV^{GE = 0 V, -diF/dt = 100 A/µ TJ = 100°C}
I_F = 1 A; -di/dt = 200 A/ms; V_R = 30 V
2.0 V
1.39
8.3 A
35
ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
2: R_thJ-DCB is the thermal resistance junction-to-internal side of DCB substrate
3: R_thJC is the thermal resistance junction-to-external side of DCB substrate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344