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IXGH36N60B3 Datasheet, PDF (2/6 Pages) IXYS Corporation – GenX3 600V IGBT
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 5Ω
RthJC
RthCS
Characteristic Values
Min. Typ.
Max.
28
42
S
2280
pF
120
pF
32
pF
80
nC
12
nC
36
nC
19
ns
24
ns
0.54
mJ
125
200 ns
100
160 ns
0.8
1.5 mJ
19
ns
26
ns
0.9
mJ
180
ns
170
ns
1.5
mJ
0.50 °C/W
0.21
°C/W
IXGH36N60B3
TO-247 Outline (IXGH)
∅P
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537