IXGH17N100 Datasheet, PDF (2/2 Pages) IXYS Corporation – Low V IGBT High speed IGBT

IXGH 17N100 IXGM 17N100
IXGH 17N100A IXGM 17N100A
Symbol
g_fs
C_ies
C_oes
C_res
Q_g
Q
ge
Q_gc
t_d(on)
t_ri
t
d(off)
t_fi
E_off
t_d(on)
t_ri
E_on
t
d(off)
t_fi
E_off
R
thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = I_C90; V_CE = 10 V,
6 15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V_CE = 25 V, V_GE = 0 V, f = 1 MHz
1500
pF
175
pF
40
pF
I = I , V = 15 V, V = 0.5 V
C
C90 GE
CE
CES
Inductive
load,
T
J
=
25°C
I_C = I_C90, V_GE = 15 V, L = 300 µH,
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
82
Ω
Remarks: Switching times
may increase
for V_CE (Clamp) > 0.8 • V_CES,
higher T_J or increased R_G
17N100
17N100A
17N100A
Inductive load, T_J = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
300
µH
V_CE = 0.8 V_CES, R_G = R_off = 82 Ω
Remarks: Switching times
may increase
for V_CE (Clamp) > 0.8 • V_CES,
higher T_J or increased R_G
17N100
17N100A
17N100
17N100A
100 120 nC
20 30 nC
60 90 nC
100
ns
200
ns
500 1000 ns
750
ns
450 750 ns
3
mJ
100
ns
200
ns
2.5
mJ
700 1000 ns
1200 2000 ns
750 1000 ns
8
mJ
6
mJ
0.83 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the
IXGH 17N100U1 and IXGH 17N100AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025