IXGF25N300 Datasheet, PDF (2/2 Pages) IXYS Corporation – High Voltage IGBT For Capacitor Discharge Applications

Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
g_fs
I_C(ON)
C_ies
C_oes
C_res
I_C = 50A, V_CE = 10V, Note 1
V_GE = 15V, V_CE = 20V, Note 1
V_CE = 15V, V_GE = 20V, f = 1MHz
Q_g(on)
Q_ge
Q_gc
I_C = 50A, V_GE = 15V, V_CE = 0.5 • V_CES
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times
I_C = 25A, V_GE = 15V
V_CE = 1500V, R_G = 5Ω
R_thJC
R_thCS
R_thJA
Characteristic Values
Min. Typ. Max.
16
26
S
240
A
2970
pF
98
pF
36
pF
75
nC
15
nC
30
nC
70
ns
240
ns
220
ns
500
ns
1.10 °C/W
0.15
°C/W
30
°C/W
IXGF25N300
ISOPLUS i4-Pak^TM (HV) Outline
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
Notes:
1. Pulse test, t < 300μs, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537