IXGA12N60C Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFAST IGBT

IXGA12N60C IXGP12N60C
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
g
I = I ; V = 10 V,
fs
C
C90 CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C_ies
C
oes
C_res
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
Characteristic Values
Min. Typ. Max.
7 11
S
860
pF
64
pF
15
pF
TO-220 AB Dimensions
Q_g
Q
ge
Q
gc
t_d(on)
t_ri
t_d(off)
t_fi
E_off
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
R_thJC
R_thCK
I = I , V = 15 V, V = 0.5 V
C
C90 GE
CE
CES
Inductive load, T_J = 25°C
I_C = I_C90, V_GE = 15 V, L = 300 µH
V_CE = 0.8 V_CES, R_G = R_off = 18 Ω
Remarks: Switching times may
increase for V (Clamp) > 0.8 V ,
CE
CES
higher T_J or increased R_G
Inductive load, T_J = 125°C
I_C = I_C90, V_GE = 15 V, L = 300 µH
V_CE = 0.8 V_CES, R_G = R_off = 18 Ω
Remarks: Switching times may
increase for V_CE (Clamp) > 0.8 V_CES,
higher T or increased R
J
G
32
nC
10
nC
10
nC
20
ns
20
ns
60
ns
55
ns
0.09
mJ
20
ns
20
ns
0.15
mJ
85 180 ns
85 180 ns
0.27 0.60 mJ
1.25 K/W
0.25
K/W
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
TO-263 AA Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025