IXFR180N085 Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)

IXFR 180N085
Symbol
g
fs
C_iss
C_oss
C
rss
t_d(on)
t_r
t_d(off)
t
f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 60A
Note 2
55 90
S
DS
D
9100
pF
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
4000
pF
2000
pF
65
ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 I_D25
90
ns
R_G = 1 W (External)
140
ns
55
ns
320
nC
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 I_D25
65
nC
170
nC
0.30 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I
Repetitive;
SM
pulse width limited by T_JM
V_SD
I_F = 100A, V_GS = 0 V, Note 1
t_rr
Q
RM
I_F = 50A,-di/dt = 100 A/ms, V_R = 50 V
I_RM
180 A
720 A
1.3 V
250 ns
1.2
mC
10
A
Note: 1. Pulse width limited by T_JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A₁ 2.29 2.54
A₂ 1.91 2.16
b 1.14 1.40
b₁ 1.91 2.13
b₂ 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
S 13.21 13.72
T 15.75 16.26
U 1.65 3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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