IXFN40N110P Datasheet, PDF (2/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
g_fs
V_DS = 20V, I_D = 20A, Note 1
R_Gi
Gate input resistance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 20A
R_G = 1Ω (External)
Q_g(on)
Q_gs
Q_gd
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 20A
R_thJC
R_thCS
Characteristic Values
Min. Typ.
Max.
20
32
S
1.65
Ω
19
nF
1070
pF
46
pF
53
ns
55
ns
110
ns
54
ns
310
nC
95
nC
142
nC
0.14 °C/W
0.05
°C/W
IXFN40N110P
SOT-227B Outline
Source-Drain Diode
T_J = 25°C unless otherwise specified)
I_S
V_GS = 0V
I_SM
Repetitive, pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0V, Note 1
t_rr
I_F = 20A, -di/dt = 100A/μs
Q_RM
V_R = 100V, V_GS = 0V
I_RM
Characteristic Values
Min. Typ.
Max.
40 A
160 A
1.5 V
300 ns
2.2
μC
16
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2