IXFN20N120 Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

IXFN 20N120
Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DS = 20 V; I_D = 0.5 • I_D25, pulse test
15
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
R_G = 1 Ω (External),
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
27
S
7400
pF
560
pF
100
pF
25
ns
45
ns
75
ns
20
ns
160
nC
35
nC
60
nC
0.16 K/W
0.05
K/W
Source-Drain Diode
Symbol
I_S
Test Conditions
V_GS = 0 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
20 A
I_SM
Repetitive;
pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
80 A
1.5 V
t_rr
I_F = I_S, -di/dt = 100 A/µs, V_R = 100 V
Q_RM
I_RM
300 ns
1.4
µC
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505