IXFN150N10 Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFET Power MOSFET

IXFN 150N10
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g
fs
C
iss
C_oss
C
rss
t_d(on)
t
r
t_d(off)
t
f
Q_g(on)
Q
gs
Q_gd
R_thJC
R
thCK
V = 10 V; I = 60A, Note 2
DS
D
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
R_G = 1 W (External),
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
50 75
S
9100
pF
2600
pF
1200
pF
50
ns
60
ns
110
ns
45
ns
360
nC
65
nC
190
nC
0.21 K/W
0.05
K/W
Source-Drain Diode
(T_J = 25°C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
I_S
V_GS = 0
I_SM
Repetitive;
pulse width limited by T_JM
V
I = 100 A, V = 0 V,
SD
F
GS
Pulse test, t £ 300 ms, duty cycle d £ 2 %
150
A
600
A
1.5
V
t
250 ns
rr
Q
RM
I
F
=
50
A,
-di/dt
=
100
A/ms,
V
R
=
50
V
1.1
mC
I_RM
13
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
Notes:
1. Pulse width limited by T_JM.
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
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