IXFK420N10T Datasheet, PDF (2/6 Pages) IXYS Corporation – GigaMOS Trench HiperFET Power MOSFET

Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
g_fs
V_DS = 10V, I_D = 60A, Note 1
110 185
S
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
47
nF
4390
pF
530
pF
R_Gi
Gate Input Resistance
1.46
Ω
t_d(on)
Resistive Switching Times
47
ns
t_r
t_d(off)
t_f
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 100A
R_G = 1Ω (External)
155
115
255
ns
ns
ns
Q_g(on)
670
nC
Q_gs
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
170
nC
Q_gd
195
nC
R_thJC
R_thCS
0.09 °C/W
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
I_S
V_GS = 0V
I_SM
Repetitive, Pulse Width Limited by T_JM
V_SD
I_F = 60A, V_GS = 0V, Note 1
t_rr
Q_RM
I_RM
I_F = 150A, -di/dt = 100A/μs
V_R = 60V, V_GS = 0V
Characteristic Values
Min. Typ. Max.
420 A
1680 A
1.2 V
140 ns
0.38
μC
7.00
A
IXFK420N10T
IXFX420N10T
TO-264 (IXFK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
0.25
20.83
2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
PLUS 247^TM (IXFX) Outline
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A₁ 2.29 2.54
A₂ 1.91 2.16
b 1.14 1.40
b₁ 1.91 2.13
b₂ 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537