IXFH4N100Q Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

IXFH 4N100Q
IXFT 4N100Q
Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DS = 20 V; I_D = 0.5 • I_D25, pulse test
1.5 2.5
S
1050
pF
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
120
pF
30
pF
17
ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
15
ns
R_G = 4.7 W (External),
32
ns
18
ns
39
nC
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
9
nC
22
nC
(TO-247)
0.8 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I
V =0V
S
GS
I
Repetitive; pulse width limited by T
SM
JM
V_SD
I_F = I_S, V_GS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
4A
16 A
1.5 V
t_rr
250 ns
Q
RM
I
F
=
I,
S
-di/dt
=
100
A/ms,
V
R
=
100
V
0.52
mC
I_RM
1.8
A
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D³ PAK)
Dim. Millimeter
Min. Max.
A
4.9 5.1
A₁
2.7
2.9
A₂
.02
.25
b 1.15 1.45
b₂
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E₁ 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
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