IXFH48N50 Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

IXFN / IXFK 44N50
IXFN / IXFK 48N50
Symbol
g_fs
C
iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DS = 10 V; I_D = 0.5 • I_D25, pulse test
22 42
S
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
8400
pF
900
pF
280
pF
30
ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
60
ns
R_G = 1 Ω (External),
100
ns
30
ns
270
nC
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
60
nC
135
nC
TO-264 AA
TO-264 AA
0.25 K/W
0.15
K/W
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.24 K/W
0.05
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I
Repetitive; pulse width limited by T
SM
JM
V_SD
I_F = 100 A, V_GS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
48 A
192 A
1.5 V
t_rr
250 ns
Q
RM
I
F
=
I,
S
-di/dt
=
100
A/µs,
V
R
=
100
V
TBD
µC
I_RM
20
A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c
0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J
0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000
.000
.800
.090
.010
.010
.820
.102
.125
.239
.330
.150
.070
.238
.062
.144
.247
.342
.170
.090
.248
.072
miniBLOC, SOT-227 B
© 2000 IXYS All rights reserved
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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